Esaki Diode Behavior in Highly Uniform MoS ₂ /Silicon Carbide Heterojunctions

The heterogeneous integration with 2D materials enables new functionalities and novel devices in state-of-the-art bulk (3D) semiconductors. In this work, highly uniform MoS2 heterostructures silicon carbide (4H-SiC) are obtained by a facile synthesis method, compatible semiconductor fab processing, i.e., the sulfurization of predeposited very-thin (≈1.2 nm) Mo films at temperature 700 °C. Current–voltage characteristics MoS2/n+-4H-SiC junctions collected conductive atomic force microscopy show pronounced negative differential resistance even room temperature, which is typical manifestation band-to-band tunneling between degenerately p+-/n+-doped Here, degenerate p+-type doping MoS2, Nholes ≈ 4 × 1019 cm−3 evaluated Raman mapping, ascribed to significant MoO3 content film, as demonstrated X-ray photoelectron spectroscopy analyses. Furthermore, resolution transmission electron analyses reveal presence an ultrathin (≈1 SiO2 barrier 4H-SiC, formed during process. observation Esaki diode behavior heterojunctions 4H-SiC opens perspectives for material system platform ultrafast low-power consumption digital applications.